Dissemination of IT for the Promotion of Materials Science (DoITPoMS)

DoITPoMS Micrograph Library Full Record for Micrograph 551

Full Record for Micrograph 551

Link to full size image of micrograph 551
[311 KB]

View micrograph
.. in new window

View micrograph and record
.. in new window


You can also view and download the micrographs on Flickr
Micrograph no
551
Brief description
A regularly stepped interface boundary between h-BN (precipitate) and Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite)
Keywords
boron nitride, ceramic Link to MATTER Glossary entry for ceramic, composite material Link to MATTER Glossary entry for composite material, silicon carbide, silicon nitride
Categories
Ceramic, Composite
System
Si3N4-SiC composite
Composition
Not specified
Standard codes
Reaction
Processing
To form the composite, hot isostatic pressing in tantalum cans is used, with a boron nitride layer sprayed onto the internal surface of the can (to prevent the tantalum reacting with the SiC).
Applications
Sample preparation
Technique
High resolution electron microscopy (HREM)
Length bar
10 nm
Further information
The occurrence of BN inclusions results from the introduction of colloidal BN into the hot isostatic pressing process. They are formed from B2O3 present as a thin surface film on the BN particles in the barrier layer. B2O3 will be molten during the pressing process and will diffuse rapidly into the powder compact and react with Si3N4 to form BN. Such inclusions can be related to failure under thermal cycling or creep test conditions (due to cavities and microcracks associated with them), may be grain growth controllers, and may influence crack deflection and slow crack growth at high temperatures.
Contributor
Dr K M Knowles
Organisation
Department of Materials Science and Metallurgy, University of Cambridge
Date
01/10/02
Licence for re-use
Attribution-NonCommercial-ShareAlike 4.0 International
Related micrographs