DoITPoMS

System

6 micrographs for system Si3N4-SiC composite, ordered by micrograph number.


Link to full record for micrograph 546 Micrograph 546 : Delamination cracks seen in h-BN particles subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite)
System: Si3N4-SiC composite, Composition: Not specified
High resolution electron microscopy (HREM)
10 nm
Link to full record for micrograph 547 Micrograph 547 : h-BN inclusion (precipitate) in a b-Si3N4 grain (within a silicon nitride particulate-reinforced silicon carbide composite)
System: Si3N4-SiC composite, Composition: Not specified
High resolution electron microscopy (HREM)
20 nm
Link to full record for micrograph 549 Micrograph 549 : Misoriented interphase boundary between h-BN (precipitate) and SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite)
System: Si3N4-SiC composite, Composition: Not specified
High resolution electron microscopy (HREM)
1.2 nm
Link to full record for micrograph 551 Micrograph 551 : A regularly stepped interface boundary between h-BN (precipitate) and Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite)
System: Si3N4-SiC composite, Composition: Not specified
High resolution electron microscopy (HREM)
10 nm
Link to full record for micrograph 552 Micrograph 552 : An amorphous phase trapped at a triple junction between Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite).
System: Si3N4-SiC composite, Composition: Not specified
High resolution electron microscopy (HREM)
20 nm
Link to full record for micrograph 553 Micrograph 553 : Image of part of a crystalline triple junction between SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite)
System: Si3N4-SiC composite, Composition: Not specified
High resolution electron microscopy (HREM)
6 nm

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