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Compound Semiconductors

In addition to group IV elements, compounds of group III and group V elements, and also compounds of group II and group VI elements are often semiconductors. The common feature to all of these is that they have an average of 4 valence electrons per atom.

One example of a compound semiconductor is gallium arsenide, GaAs. In a compound semiconductor like GaAs, doping can be accomplished by slightly varying the stoichiometry, i.e., the ratio of Ga atoms to As atoms. A slight increase in the proportion of As produces n-type doping, and a slight increase in the proportion of Ga produces p-type doping.

The table below list some semiconducting elements and compounds together with their bandgaps at 300 K.

 
Material
Direct / Indirect Bandgap
Band Gap Energy at 300 K (eV)


Elements


C (diamond)
Ge
Si
Sn (grey)


Indirect
Indirect
Indirect
Direct


5.47
0.66
1.12
0.08

Groups III-V compounds

GaAs
InAs
InSb
GaP
GaN
InN

Direct
Direct
Direct
Indirect
Direct
Direct

1.42
0.36
0.17
2.26
3.36
0.70

Groups IV-IV compounds

α-SiC

Indirect

2.99

Groups II-VI compounds

ZnO
CdSe
ZnS

Direct
Direct
Direct

3.35
1.70
3.68

Data from R.E. Hummel, Electronic Properties of Materials, 3rd edition, Appendix 4, p. 413.