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Micrograph 552 and full record
- Micrograph no
- 552
- Brief description
- An amorphous phase trapped at a triple junction between Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite).
- Keywords
- ceramic
, composite material , silicon carbide, silicon nitride - Categories
- Ceramic, Composite
- System
- Si3N4-SiC composite
- Composition
- Not specified
- Standard codes
- Reaction
- Processing
- To form the composite, hot isostatic pressing in tantalum cans is used, with a boron nitride layer sprayed onto the internal surface of the can (to prevent the tantalum reacting with the SiC).
- Applications
- Sample preparation
- Technique
- High resolution electron microscopy (HREM)
- Length bar
- 20 nm
- Further information
- The amorphous phase extends into at least one of the grain boundaries with a thickness of about 10 angstrom.
- Contributor
- Dr K M Knowles
- Organisation
- Department of Materials Science and Metallurgy, University of Cambridge
- Date
- 01/10/02
- Licence for re-use
Attribution-NonCommercial-ShareAlike 4.0 International- Related micrographs
- Micrograph 546: Delamination cracks seen in h-BN particles subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite) (10 nm)
- Micrograph 547: h-BN inclusion (precipitate) in a b-Si3N4 grain (within a silicon nitride particulate-reinforced silicon carbide composite) (20 nm)
- Micrograph 549: Misoriented interphase boundary between h-BN (precipitate) and SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite) (1.2 nm)
- Micrograph 551: A regularly stepped interface boundary between h-BN (precipitate) and Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite) (10 nm)
- Micrograph 553: Image of part of a crystalline triple junction between SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite) (6 nm)
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