Micrograph 127 and full record
- Micrograph no
- 127
- Brief description
- CMOS integrated circuit with Al wiring
- Keywords
- device, integrated circuit , passivated , surface
- Categories
- Device
- System
- Miscellaneous
- Composition
- Not specified
- Standard codes
- Reaction
- Processing
- Applications
- Sample preparation
- Technique
- Focused ion beam (FIB) secondary electron image
- Length bar
- 40 μm
- Further information
- Upper surface completed. Smooth dielectric coating applied for protection purposes. The depressions associated with the contacts are clearly visible.
- Contributor
- Dr D F Moore
- Organisation
- Department of Engineering, University of Cambridge
- Date
- 03/01/02
- Licence for re-use
- DoITPoMS standard terms of use
- Related micrographs
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