Micrograph 553 and full record

Micrograph no

553

Brief description

Image of part of a crystalline triple junction between SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite)

Keywords

ceramic , composite material , silicon carbide, silicon nitride

Categories

Ceramic, Composite

System

Si₃N₄-SiC composite

Composition

Not specified

Standard codes

Reaction

Processing

To form the composite, hot isostatic pressing in tantalum cans is used, with a boron nitride layer sprayed onto the internal surface of the can (to prevent the tantalum reacting with the SiC).

Applications

Sample preparation

Technique

High resolution electron microscopy (HREM)

Length bar

6 nm

Further information

Contributor

Dr K M Knowles

Organisation

Department of Materials Science and Metallurgy, University of Cambridge

Date

01/10/02

Licence for re-use

Attribution-NonCommercial-ShareAlike 4.0 International

Related micrographs

• Micrograph 546: Delamination cracks seen in h-BN particles subjected to compressive stress in the (0001) planes (within a silicon nitride particulate-reinforced silicon carbide composite) (10 nm)
• Micrograph 547: h-BN inclusion (precipitate) in a b-Si3N4 grain (within a silicon nitride particulate-reinforced silicon carbide composite) (20 nm)
• Micrograph 549: Misoriented interphase boundary between h-BN (precipitate) and SiC grains (within a silicon nitride particulate-reinforced silicon carbide composite) (1.2 nm)
• Micrograph 551: A regularly stepped interface boundary between h-BN (precipitate) and Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite) (10 nm)
• Micrograph 552: An amorphous phase trapped at a triple junction between Si3N4 grains (within a silicon nitride particulate-reinforced silicon carbide composite). (20 nm)

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